31 May 2018 Black holes enabled light bending and trapping in ultrafast silicon photodetectors
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Abstract
Micro and nanoscale holes on the surfaces of indirect band gap semiconductors such as silicon can enable perpendicular light bending and trapping of photons to enhance the light material interactions and absorption by orders of magnitude. The ‘bending’ of a vertically oriented light beam at nearly 90 degrees can be visualized as radial waves generated by a pebble dropped into a calm pool of water. Such bending and photon trapping result in an increased optical absorption path enabling very high light absorption coefficients. This observation led to the design of silicon photodetectors with high broadband efficiency above 50% and record ultrafast response contributing to more than 40 billion bits of data per second (Gb/s) communication speed.
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Hilal Cansizoglu, Hilal Cansizoglu, Yang Gao, Yang Gao, Soroush Ghandiparsi, Soroush Ghandiparsi, Cesar Bartolo Perez, Cesar Bartolo Perez, Hasina H. Mamtaz, Hasina H. Mamtaz, Mehmet F. Cansizoglu, Mehmet F. Cansizoglu, Toshishige Yamada, Toshishige Yamada, Ekaterina Ponizovskaya Devine, Ekaterina Ponizovskaya Devine, Aly F. Elrefaie, Aly F. Elrefaie, Shih-Yuan Wang, Shih-Yuan Wang, M. Saif Islam, M. Saif Islam, } "Black holes enabled light bending and trapping in ultrafast silicon photodetectors", Proc. SPIE 10639, Micro- and Nanotechnology Sensors, Systems, and Applications X, 106390I (31 May 2018); doi: 10.1117/12.2309830; https://doi.org/10.1117/12.2309830
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