Plasma wave electronics approach has a potential for achieving efficient THz emission and sensitive detection using IIIV- based, III-N-based, graphene, Si, SiGe and diamond devices and nanostructure arrays. The physics of these THz plasmonic devices involves collision-dominated, quasi-ballistic, and viscosity dominated regimes of the electron or hole transport. THz plasmonic room temperature detectors have demonstrated excellent performance with potential applications for THz communication and sensing. THz plasmonic emitters based on the Dyakonov-Shur instability and on the “plasmonic boom” concept have promise of achieving high powers at reasonable efficiencies but still should be demonstrated.
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