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14 May 2018 Material considerations for current and next generation microbolometer technology
A. J. Syllaios, M. S. Harcrow, B. J. Western, V. C. Lopes, C. L. Littler, Ray Gunawidjaja, Zhi-Gang Yu
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Abstract
Electrical conduction in materials used in microbolometer technology, such as vanadium oxide (VOx) and amorphous silicon (a-Si), is via carrier hopping between localized states. The hopping conduction parameters determine the temperature coefficient of resistance (TCR), its temperature dependence, and its relationship to resistivity. The electrical noise has a 1/f component that is also associated to the hopping parameters and thus correlated to TCR. Current research on conduction in cross linked metal nanoparticles organized in an insulating matrix shows that TCR and noise can be controlled independently, potentially allowing for precise tailoring of the detector response for differing applications.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. J. Syllaios, M. S. Harcrow, B. J. Western, V. C. Lopes, C. L. Littler, Ray Gunawidjaja, and Zhi-Gang Yu "Material considerations for current and next generation microbolometer technology", Proc. SPIE 10656, Image Sensing Technologies: Materials, Devices, Systems, and Applications V, 106560E (14 May 2018); https://doi.org/10.1117/12.2303728
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Cited by 2 scholarly publications.
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KEYWORDS
Particles

Amorphous silicon

Temperature metrology

Metals

Microbolometers

Data modeling

Nanoparticles

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