14 May 2018 Low-noise, digital-alloy avalanche photodiodes
Author Affiliations +
Abstract
Avalanche photodiodes (APDs) can provide higher sensitivity than p-i-n photodiodes owing to their internal gain. However, the gain, which originates from impact ionization is also a source of noise. Recently, using AlxIn1-xAsySb1-y grown as a digital alloy we have demonstrated APDs with noise as low as Si at telecommunication wavelengths (1300 nm to 1550 nm). In this paper, we report on additional AlInGaAsSb digital alloys and demonstrate noise suppression relative to random alloys. This is related to the fundamental issue of transport in ordered materials and provides the potential for “designer APDs” covering a broad range of spectral bands.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joe C. Campbell, Joe C. Campbell, Seth R. Bank, Seth R. Bank, } "Low-noise, digital-alloy avalanche photodiodes", Proc. SPIE 10656, Image Sensing Technologies: Materials, Devices, Systems, and Applications V, 106560I (14 May 2018); doi: 10.1117/12.2309781; https://doi.org/10.1117/12.2309781
PROCEEDINGS
6 PAGES + PRESENTATION

SHARE
Back to Top