Current THz imaging systems are usually restricted to laboratory use due the lack of compact, portable and roomtemperature operated sources and detectors. Therefore, the implementation of CMOS based THz detectors is key to promote the exploitation of low-cost, room-temperature, high-resolution, highly sensitive, and portable THz imaging systems. Here we present the monolithic integration of two types of THz FPAs fabricated in a standard 180 nm CMOS process. The imagers are composed of THz metamaterials (MM) absorbers coupled to a microbolometer, either vanadium oxide (VOx) or silicon pn diode, integrated with readout electronics to form 64 x 64 CMOS FPAs. The suitability of THz imagers for stand-off imaging of concealed objects was demonstrated in transmission mode by capturing images of metallic objects hidden in a manila envelope.
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Ivonne Escorcia, James P. Grant, Luis Gouveia, David R. S. Cumming, "Terahertz imagers based on metamaterial structures monolithically integrated in standard CMOS technologies," Proc. SPIE 10656, Image Sensing Technologies: Materials, Devices, Systems, and Applications V, 1065617 (14 May 2018);