14 May 2018 0.16 μm BCD single-photon avalanche diode with 30 ps timing jitter, high detection efficiency and low noise
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Abstract
CMOS SPADs are nowadays an established imaging technology for applications requiring single-photon sensitivity in a compact form-factor (e.g. three-dimensional LIDAR imaging and fluorescence lifetime FLIM microscopy). However, we aimed at further enhance overall SPAD performances, by exploiting smart power technologies, such as the BCD (Bipolar-CMOS-DMOS) one. We achieved the present state-of-the-art SPADs fabricated in the 0.16 μm BCD technology by STMicroelectronics, attaining >60% photon detection efficiency at 500 nm, dark count rate density < 0.2 cps/μm2, and less than 30 ps FWHM timing jitter.
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Mirko Sanzaro, Mirko Sanzaro, Paolo Gattari, Paolo Gattari, Federica Villa, Federica Villa, Alberto Tosi, Alberto Tosi, Giuseppe Croce, Giuseppe Croce, Franco Zappa, Franco Zappa, } "0.16 μm BCD single-photon avalanche diode with 30 ps timing jitter, high detection efficiency and low noise", Proc. SPIE 10659, Advanced Photon Counting Techniques XII, 106590D (14 May 2018); doi: 10.1117/12.2304851; https://doi.org/10.1117/12.2304851
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