Growth of bio sensor materials by physical vapor transport method

N. B. Singh; Ching Hua Su; Bradley Arnold; Brian Cullum; Fow-Sen Choa; Tara Carpenter; David Sachs; K. D. Mandal

doi:10.1117/12.2303665

14 May 2018 Growth of bio sensor materials by physical vapor transport method

N. B. Singh, Ching Hua Su, Bradley Arnold, Brian Cullum, Fow-Sen Choa, Tara Carpenter, David Sachs, K. D. Mandal

Proceedings Volume 10662, Smart Biomedical and Physiological Sensor Technology XV; 1066203 (2018) https://doi.org/10.1117/12.2303665
Event: SPIE Commercial + Scientific Sensing and Imaging, 2018, Orlando, FL, United States

Abstract

Recently there is a big thrust on bio-inspired sensors and there has been a large rise in the investment and expectations for nanotechnology to meet these goals. For in situ sensor development materials deposition on substrate is essential part of device development. Physical vapor deposition (PVD), chemical vapor deposition (CVD) and molecular organic vapor deposition methods have developed for growth of semiconductor bulk and thin film growth with some modifications have been used for these materials. Oxides and other elements of VI group such as sulfides and selenides are key components in skins of many species. Growth of ordered structures containing these elements have been achieved by using PVD method. This paper describes effect of growth parameters during PVD growth on the quality of materials. Growth kinetics and mechanism will be discussed for the vertical and horizontal growth reactors. Since most of the efficient materials systems are multinary and in many cases noncongruent, PVD provides pathway to grow materials below melting temperature.

Conference Presentation

Citation Download Citation

N. B. Singh, Ching Hua Su, Bradley Arnold, Brian Cullum, Fow-Sen Choa, Tara Carpenter, David Sachs, and K. D. Mandal "Growth of bio sensor materials by physical vapor transport method ", Proc. SPIE 10662, Smart Biomedical and Physiological Sensor Technology XV, 1066203 (14 May 2018); https://doi.org/10.1117/12.2303665

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available