4 May 2018 Theoretical investigation of electro-absorption in strain compensated Tin doped group IV alloy based quantum well
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Abstract
This paper focus on the theoretical investigation of quantum confined Stark effect (QCSE) in strain compensated SiGeSn/GeSn single quantum well (QW). Eigen energies in presence of electric field, for Г valley conduction band (Г- CB) and heavy hole band (HH)) are obtained from the self consistent solution of coupled Schrödinger and Poisson equations by finite difference method. Absorption coefficient considering excitonic effect for direct transition of HH band to Г valley is calculated. A significant shift in absorption peak towards longer wavelengths is observed.
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Prakash Pareek, Prakash Pareek, Lokendra Singh, Lokendra Singh, Nishit Malviya, Nishit Malviya, Jitendra K. Mishra, Jitendra K. Mishra, } "Theoretical investigation of electro-absorption in strain compensated Tin doped group IV alloy based quantum well", Proc. SPIE 10672, Nanophotonics VII, 1067223 (4 May 2018); doi: 10.1117/12.2304310; https://doi.org/10.1117/12.2304310
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