Infrared (IR) photoresistors based on recrystallized amorphous germanium films on silicon using liquid phase epitaxy

Saloni Chaurasia; Avijit Chatterjee; Shankar Selvaraja; Sushobhan Avasthi

doi:10.1117/12.2319148

9 May 2018 Infrared (IR) photoresistors based on recrystallized amorphous germanium films on silicon using liquid phase epitaxy

Saloni Chaurasia, Avijit Chatterjee, Shankar Selvaraja, Sushobhan Avasthi

Author Affiliations +

Proceedings Volume 10680, Optical Sensing and Detection V; 106802T (2018) https://doi.org/10.1117/12.2319148
Event: SPIE Photonics Europe, 2018, Strasbourg, France

Abstract

In this work a heterogeneously integrated germanium (Ge) NIR photo-resistor fabricated on CMOS-compatible silicon substrates is presented. The resistor is fabricated on an epitaxial germanium films grown on silicon using a novel liquid phase crystallization (LPC) process. First, silicon wafers were coated with amorphous germanium deposited using PECVD. Next, Ge film is crystallized into epitaxial germanium using a thermal anneal cycle during which Ge undergoes melting and controlled cooling. The LPE Ge films is polycrystalline but epitaxial with threading dislocation density of ~10⁹ cm^-2. On the LPE germanium, NIR photo-resistors were fabricated with metal-semiconductor-metal (MSM) inter-digitated structure with an active area of 150 μm x 300 μm. Responsivity of the devices was characterized using a fiber laser, tunable from 1500 to 1600 nm. With 1550 nm excitation, a photocurrent of 100 μA was measured at a bias of 4V with laser power of 25 mW, corresponding to a responsivity of 4 mA/W.

Citation Download Citation

Saloni Chaurasia, Avijit Chatterjee, Shankar Selvaraja, and Sushobhan Avasthi "Infrared (IR) photoresistors based on recrystallized amorphous germanium films on silicon using liquid phase epitaxy", Proc. SPIE 10680, Optical Sensing and Detection V, 106802T (9 May 2018); https://doi.org/10.1117/12.2319148

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