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23 May 2018 Near-infrared GaAsBi quantum well laser diodes (Conference Presentation)
Shumin Wang, Xiaoyan Wu, Juanjuan Liu, Wenwu Pan, Chunfang Cao, Yaoyao Li, Lijuan Wang
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Proceedings Volume 10682, Semiconductor Lasers and Laser Dynamics VIII; 106821B (2018) https://doi.org/10.1117/12.2303971
Event: SPIE Photonics Europe, 2018, Strasbourg, France
Abstract
Dilute bismide is a novel class of III-V semiconductor compound possessing a number of attractive physical properties such as a large band-gap bowing effect, a large spin-orbit split band and a less temperature sensitive band-gap etc. In this talk, I will present electrically pumped near infrared GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy with room-temperature lasing up to 1.14 m. Epitaxial growth is carefully optimized to ensure high bismuth incorporation and high optical quality at the same time. The LDs reveal an output power over 120 mW under pulsed excitation at 300 K and can operate under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm-1. The characteristic temperature is 79 K in the temperature range of 225-350 K and the temperature coefficient of the lasing wavelength is 0.26 nm/K at 77-350 K, much smaller than 0.35-0.40 nm/K for InGaAs and InGaAsP QW LDs. These results suggest that GaAsBi LDs are attractive candidates for uncooled near infrared lasers on GaAs.
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Shumin Wang, Xiaoyan Wu, Juanjuan Liu, Wenwu Pan, Chunfang Cao, Yaoyao Li, and Lijuan Wang "Near-infrared GaAsBi quantum well laser diodes (Conference Presentation)", Proc. SPIE 10682, Semiconductor Lasers and Laser Dynamics VIII, 106821B (23 May 2018); https://doi.org/10.1117/12.2303971
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KEYWORDS
Quantum wells
Near infrared
Semiconductor lasers
Bismuth
Gallium arsenide
Group III-V semiconductors
Indium gallium arsenide
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