17 May 2018 Structure and optical properties of PECVD-prepared As-Se-Te chalcogenide films designed for the IR optical applications
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Abstract
For the first time films of the As-Se-Te (15≤As≤40, 30≤Se≤65, 5≤Te≤30) chalcogenide system have been prepared by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at low pressure (0.1 Torr). RF (40 MHz) inductively coupled non-equilibrium plasma discharge has been chosen as the initiator of chemical interaction between precursors. Elemental As, Se, and Te of high-purity were used as the initial substances. High-pure argon was utilized as career gas as plasma feed gas. The obtained chalcogenide planar materials have been studied in terms their physical-chemical properties. The films were modified by continuous and femtosecond laser irradiation.
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Aleksey Nezhdanov, Aleksey Nezhdanov, Leonid Mochalov, Leonid Mochalov, Dmitry Usanov, Dmitry Usanov, Mikhail Kudryashov, Mikhail Kudryashov, Alexandr Logunov, Alexandr Logunov, Andrey Stepanov, Andrey Stepanov, Aleksey Murzanev, Aleksey Murzanev, Alexey Korytin, Alexey Korytin, Alexander Romashkin, Alexander Romashkin, Dominik Dorosz, Dominik Dorosz, Aleksandr Mashin, Aleksandr Mashin, } "Structure and optical properties of PECVD-prepared As-Se-Te chalcogenide films designed for the IR optical applications", Proc. SPIE 10683, Fiber Lasers and Glass Photonics: Materials through Applications, 106833K (17 May 2018); doi: 10.1117/12.2314763; https://doi.org/10.1117/12.2314763
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