30 May 2018 Integrated rare-Earth doped mode-locked lasers on a CMOS platform
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Abstract
Mode-locked lasers provide extremely low jitter optical pulse trains for a number of applications ranging from sampling of RF-signals and optical frequency combs to microwave and optical signal synthesis. Integrated versions have the advantage of high reliability, low cost and compact. Here, we describe a fully integrated mode-locked laser architecture on a CMOS platform that utilizes rare-earth doped gain media, double-chirped waveguide gratings for dispersion compensation and nonlinear Michelson Interferometers for generating an artificial saturable absorber to implement additive pulse mode locking on chip. First results of devices at 1.9 μm using thulium doped aluminum-oxide glass and operating in the Q-switched mode locking regime are presented.
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Franz X. Kärtner, Patrick T. Callahan, Katia Shtyrkova, Nanxi Li, Neetesh Singh, Ming Xin, Ravi Koustuban, Jelena Notaros, E. Salih Magden, Diedrik Vermeulen, Erich P. Ippen, Michael R. Watts, "Integrated rare-Earth doped mode-locked lasers on a CMOS platform", Proc. SPIE 10686, Silicon Photonics: From Fundamental Research to Manufacturing, 106860F (30 May 2018); doi: 10.1117/12.2318010; https://doi.org/10.1117/12.2318010
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