21 May 2018 Ultrahigh efficiency III-V on Si MOS capacitor optical modulator
Author Affiliations +
Abstract
A high-efficiency and low-loss Mach-Zehnder modulator on a Si platform is a key component for meeting the demand for high-capacity, low-cost and low-power optical transceivers in future optical fiber links. We report a III-V/Si MOS capacitor Mach-Zehnder modulator with an ultrahigh-efficiency phase shifter, which consists of n-type InGaAsP and ptype Si. The main advantage of this structure is a large electron-induced refractive index change and low free-carrier absorption loss of the n-type InGaAsP. The heterogeneously integrated InGaAsP/Si MOS capacitor structure is fabricated by using the oxygen plasma assisted bonding method. The fabricated device shows VπL of 0.09 Vcm, a value over three-times smaller than that of the conventional Si MOS capacitor Mach-Zehnder modulator, without an increase in the insertion loss. This clearly indicates that the proposed III-V/Si MOS capacitor Mach-Zehnder modulator overcomes the performance limit of the Si Mach-Zehnder modulator.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, S. Matsuo, "Ultrahigh efficiency III-V on Si MOS capacitor optical modulator", Proc. SPIE 10686, Silicon Photonics: From Fundamental Research to Manufacturing, 106860K (21 May 2018); doi: 10.1117/12.2312315; https://doi.org/10.1117/12.2312315
PROCEEDINGS
6 PAGES


SHARE
Back to Top