Translator Disclaimer
21 May 2018 Toward a hybrid integration of a 4-wavelength InGaAsP laser array on the slotted silicon waveguide
Author Affiliations +
Abstract
A room temperature four-channel hybrid laser array was realized by using selective area metal bonding method, which is able to evanescently couple the light from InGaAsP multi-quantum well laser diodes into the slotted silicon waveguide. The output wavelength of this hybrid laser can be accurately tuned to 1538.6 nm, 1540.5 nm 1544.9 nm and 1550 nm through controlling the waveguide width of each channel. A typical threshold current of one channel was of 20 mA and the corresponding side-mode suppression ratio was of 20 dB. Moreover, one advantage of such slotted structures is the ease in fabrication, thus making this type of devices as a promising candidate for wavelength division multiplex in future optical communication system.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xing Dai, Hongyan Yu, Pengfei Wang, Weixi Chen, and Jiaoqing Pan "Toward a hybrid integration of a 4-wavelength InGaAsP laser array on the slotted silicon waveguide", Proc. SPIE 10686, Silicon Photonics: From Fundamental Research to Manufacturing, 106860L (21 May 2018); https://doi.org/10.1117/12.2317999
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Cavity enhanced 1.5 um LED with silicon as a hole...
Proceedings of SPIE (March 07 2016)
200mm full CMOS compatible hybrid III V Si laser process...
Proceedings of SPIE (January 01 1900)
Hybrid silicon lasers
Proceedings of SPIE (January 17 2011)
Thin film edge emitting lasers integrated onto silicon
Proceedings of SPIE (February 12 2010)

Back to Top