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21 May 2018 Toward a hybrid integration of a 4-wavelength InGaAsP laser array on the slotted silicon waveguide
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A room temperature four-channel hybrid laser array was realized by using selective area metal bonding method, which is able to evanescently couple the light from InGaAsP multi-quantum well laser diodes into the slotted silicon waveguide. The output wavelength of this hybrid laser can be accurately tuned to 1538.6 nm, 1540.5 nm 1544.9 nm and 1550 nm through controlling the waveguide width of each channel. A typical threshold current of one channel was of 20 mA and the corresponding side-mode suppression ratio was of 20 dB. Moreover, one advantage of such slotted structures is the ease in fabrication, thus making this type of devices as a promising candidate for wavelength division multiplex in future optical communication system.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xing Dai, Hongyan Yu, Pengfei Wang, Weixi Chen, and Jiaoqing Pan "Toward a hybrid integration of a 4-wavelength InGaAsP laser array on the slotted silicon waveguide", Proc. SPIE 10686, Silicon Photonics: From Fundamental Research to Manufacturing, 106860L (21 May 2018);


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