5 June 2018 Nonlinear optical thin films for super-resolved direct laser writing
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The diffraction limit is one of the main difficulties in order to achieve nano-resolution. An evolution in this domain can allow a significant advance in the field of photonic circuit fabrication. Surpassing the diffraction limit can be achieved by employing significant optical nonlinearities (nonlinear refraction and/or nonlinear absorption). In this direction we investigate the nonlinear absorption efficiency of annealed Sb2Te3 chalcogenide thin films (20 nm thickness). The studies have been performed using the Z-scan technique, employing 11 ns duration pulses at 1064 nm. The Z-scan technique has been chosen as it allows the simultaneous determination of the nonlinear refraction and the nonlinear absorption of a material, under certain conditions. Our results indicate a significant nonlinear absorption, while the nonlinear refraction is at least one order of magnitude lower. The nonlinear absorption parameter has been found to be in the order of -10-3 m/W under infrared irradiation showing the importance of the prepared materials for laser photoinscription applications. Our values are compared with previous studies, which have been carried out in the visible part of the spectrum. The possibility to perform photonic component fabrication by local modification of the linear or the nonlinear properties of the materials is also discussed.
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C. Moisset, C. Moisset, A. Bourgade, A. Bourgade, F. Liu, F. Liu, C. Perrin, C. Perrin, J. Lumeau, J. Lumeau, H. Akhouayri, H. Akhouayri, J.-Y. Natoli, J.-Y. Natoli, K. Iliopoulos, K. Iliopoulos, } "Nonlinear optical thin films for super-resolved direct laser writing", Proc. SPIE 10691, Advances in Optical Thin Films VI, 1069115 (5 June 2018); doi: 10.1117/12.2313629; https://doi.org/10.1117/12.2313629

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