The study of VOPc thin film transistors on modified substrates

De Song; Qi Xu; Hongcang Cheng; Bao-zeng Li; Yubin Shang

doi:10.1117/12.2309741

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20 February 2018 The study of VOPc thin film transistors on modified substrates

De Song, Qi Xu, Hongcang Cheng, Bao-zeng Li, Yubin Shang

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Proceedings Volume 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application; 106970S (2018) https://doi.org/10.1117/12.2309741
Event: Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 2017, Nanjing, China

Abstract

The vanadyl phthalocyanine (VOPc) organic thin film transistors (OTFTs) were fabricated on the various organosilane self-assembled monolayer (SAM) modified substrates. And the effect of the surface properties on the performance of these transistors was studied. The atomic force morphologies and X-ray diffraction (XRD) spectrums of vanadyl phthalocyanine films on different SAM-modified surfaces were studied. They reveal that the terminal functional groups of organosilane affect the growth of VOPc film and device performance. The VOPc film on octadecyltrichlorosilane (OTS) modified substrate has larger crystal size and effective crystal thickness than those on phenyltrichlorosilane (PTS), 1H,1H,2H,2H-Perfluorodec-yltrichlorosilane (FDTS) as well as non-modified substrate, which contributes the mobility of corresponding device several and several dozen times relative to other ones. The effective crystal thickness and crystal grain size of VOPc film on PTS is between that on OTS treated and that on non-modified substrate due to the stronger attractive force between VOPc and SiO2. The VOPc films’ performance and effective crystal thickness on FDTS treated are worse than that on PTS due to the existents of attractive force between –CF₃ and VOPc.

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De Song, Qi Xu, Hongcang Cheng, Bao-zeng Li, and Yubin Shang "The study of VOPc thin film transistors on modified substrates", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106970S (20 February 2018); https://doi.org/10.1117/12.2309741

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