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20 February 2018 Effect of total dose irradiation on Si and InGaAs detectors
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Abstract
According to the environmental requirement of detectors, we studied the characteristics of Si and InGaAs detectors irradiated by the Cobalt60-γray with the total dose of 5krad, 10 krad, 20 krad, 30krad respectively. We measured the dark current and relative spectral responsivity by the Relative Responsivity Measurement Apparatus before and after irradiation. The results suggest that the characteristics of Silicon and InGaAs detectors don't change obviously after different total dose irradiation, both detectors can work in the space irradiation environment due to its stability and reliability.
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Jingjing Shi, Yadong Hu, Shanshan Cui, Xinyu Yu, Lin Huang, Xiaobing Sun, and Jin Hong "Effect of total dose irradiation on Si and InGaAs detectors", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106972H (20 February 2018); https://doi.org/10.1117/12.2315486
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