20 February 2018 Reduce the efficiency droop by p-doped quantum well barriers in InGaN multiple quantum well
Author Affiliations +
Abstract
InGaN LEDs with different doped type and doping concentration of quantum well barriers are theoretically studied and compared by using the APSYS simulation program. Comparing with the undoped and the n-doped, the good efficiency profile is obtained when the quantum well barrier is p-doped. As the concentration of p-doped increases, the hole concentration in quantum well increases markedly. The optical performance; radiative recombination rate are improved and electron leakage is reduced.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xioadong Yang, Xioadong Yang, Shichen Su, Shichen Su, Xiaoxia Wen, Xiaoxia Wen, Ting Mei, Ting Mei, Jin Guo, Jin Guo, } "Reduce the efficiency droop by p-doped quantum well barriers in InGaN multiple quantum well", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106974C (20 February 2018); doi: 10.1117/12.2307292; https://doi.org/10.1117/12.2307292
PROCEEDINGS
7 PAGES


SHARE
Back to Top