20 February 2018 Simulation study on the enhancement of HgCdTe infrared detector with multi-level-profile photonic crystal
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Proceedings Volume 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application; 106974H (2018) https://doi.org/10.1117/12.2307805
Event: Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 2017, Nanjing, China
Abstract
The photonic crystal structure can be utilized for improving the transmission within a broadband, and suppressing the dark current of detector efficiently as well. Considering such an advantage, the study on the multi-level profile photontrapping structure is performed; meanwhile, the enhancement of HgCdTe mid-wavelength infrared detector based on such a structure is analyzed. With the help of FDTD model and FEM model, via optimizing the structure, a multi-level profile photon-trapping detector scheme with a quantum efficiency enhancement of 20% is established. The proposed simulation results and structure are crucial for further acquiring HgCdTe detector with enhanced SNR.
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Xiao Lin, Ziyu Ding, Xiaoyan Hu, Weiping Wang, Dongliang Zhang, Dachuan Liu, Kenan Zhang, "Simulation study on the enhancement of HgCdTe infrared detector with multi-level-profile photonic crystal", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106974H (20 February 2018); doi: 10.1117/12.2307805; https://doi.org/10.1117/12.2307805
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