20 February 2018 Simulation of high performance GaN/InGaN heterojunction phototransistor
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Abstract
In this paper, we report a two-dimension(2D) simulation of high performance GaN/In0.03Ga0.97N/GaN heterojunction phototransistor(HPT) by Silvaco TCAD and provide a direction for the optimization of GaN/InGaN HPTs. The dark current variation with the change of base parameter is studied in detail, it is found that the device with lower base doping has lower punch-through voltage. The thinner base will also reduce the punch-through voltage. The dark current at breakdown point can be affected by the base carrier concentration and the thickness.
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Junxi Zhang, Junxi Zhang, Yidong Wang, Yidong Wang, Jun Chen, Jun Chen, "Simulation of high performance GaN/InGaN heterojunction phototransistor", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106974N (20 February 2018); doi: 10.1117/12.2309845; https://doi.org/10.1117/12.2309845
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