Paper
20 February 2018 High-brightness tapered laser diodes with photonic crystal structures
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Proceedings Volume 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application; 106974Y (2018) https://doi.org/10.1117/12.2315462
Event: Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 2017, Nanjing, China
Abstract
Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≈1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Li, Weichuan Du, Zhou Kun, Songxin Gao, Yi Ma, and Chun Tang "High-brightness tapered laser diodes with photonic crystal structures", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106974Y (20 February 2018); https://doi.org/10.1117/12.2315462
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KEYWORDS
Photonic crystals

Semiconductor lasers

Waveguides

Diffraction

Diodes

Gallium arsenide

Laser development

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