Simulation of high performance GaN/InGaN heterojunction phototransistor

Junxi Zhang; Yidong Wang; Jun Chen

doi:10.1117/12.2309845

20 February 2018 Simulation of high performance GaN/InGaN heterojunction phototransistor

Junxi Zhang, Yidong Wang, Jun Chen

Proceedings Volume 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application; 106974N (2018) https://doi.org/10.1117/12.2309845
Event: Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 2017, Nanjing, China

Abstract

In this paper, we report a two-dimension(2D) simulation of high performance GaN/In_0.03Ga_0.97N/GaN heterojunction phototransistor(HPT) by Silvaco TCAD and provide a direction for the optimization of GaN/InGaN HPTs. The dark current variation with the change of base parameter is studied in detail, it is found that the device with lower base doping has lower punch-through voltage. The thinner base will also reduce the punch-through voltage. The dark current at breakdown point can be affected by the base carrier concentration and the thickness.

Citation Download Citation

Junxi Zhang, Yidong Wang, and Jun Chen "Simulation of high performance GaN/InGaN heterojunction phototransistor", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106974N (20 February 2018); https://doi.org/10.1117/12.2309845

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