Presentation + Paper
20 July 2018 Proton radiation damage experiment on a hybrid CMOS detector
Author Affiliations +
Abstract
We report on the initial results of an experiment to determine the effects of proton radiation damage on an X-ray hybrid CMOS detector (HCD). The device was irradiated at the Edwards Accelerator Lab at Ohio University with 8 MeV protons, up to a total absorbed dose of 3 krad(Si) (4.5 x 109 protons/cm2). The effects of this radiation on read noise, dark current, gain, and energy resolution are then analyzed. This exposure is the first of several which will be used for characterizing detector performance at absorbed dose levels that are relevant for imaging devices operating in a deep-space environment.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Evan Bray, Abraham D. Falcone, Mitchell Wages, David N. Burrows, Carl R. Brune, Donald Carter, and Devon Jacobs "Proton radiation damage experiment on a hybrid CMOS detector", Proc. SPIE 10709, High Energy, Optical, and Infrared Detectors for Astronomy VIII, 107090L (20 July 2018); https://doi.org/10.1117/12.2312636
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Sensors

Radiation effects

CMOS sensors

Annealing

X-rays

Silicon

Environmental sensing

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