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6 July 2018 Pair creation energy and Fano factor of silicon measured at 185 K using 55Fe x-rays
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Abstract
The pair creation energy,ω and the Fano factor of silicon were measured using a CCD sensor and X-rays from an 55Fe source. The measurements were performed at a sensor temperature of 185K. The pair creation energy was measured for X-rays in the 1.7-6.5 keV range. The measured pair creation energy is ω = (3:650 ± 0:009) eV at the Mn Kα line energy. The Fano factor at this energy is F = 0:128±0:001. The agreement with theory and previous measurements is satisfactory. The system gain was obtained from at field exposures using the Poisson distribution properties. These results and the details of our measurement procedure are presented below.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. V. Kotov, H. Neal, and P. O'Connor "Pair creation energy and Fano factor of silicon measured at 185 K using 55Fe x-rays", Proc. SPIE 10709, High Energy, Optical, and Infrared Detectors for Astronomy VIII, 107091E (6 July 2018); https://doi.org/10.1117/12.2310131
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