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10 July 2018 HgCdTe detectors grown on silicon substrates for observational astronomy
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With the next generation observatories such as GMT, TMT, and E-ELT looming, the astronomy community is in need of unprecedented number of infrared pixels. To address the affordability of the next generation of infrared instruments, the Center for Detectors (CfD) at the Rochester Institute of Technology (RIT) and Raytheon Vision Systems (RVS) are developing large format, short-wave infrared HgCdTe focal plane arrays grown on silicon (Si) wafers for observational astronomy. The use of silicon wafers offers significant savings and a path to very large format (>; 8K×8K, 15 μm) focal plane arrays. This paper presents the latest results from the detector development effort and its suitability for use in observational astronomy. Currently, the HgCdTe/Si technology is competitive with the state-of-the-art HgCdTe/CZT technology in many performance metrics, and it has the promise to meet stringent performance requirements posed by observational astronomy. A full suite of characterization results, including for dark current, read noise, spectral response, persistence, linearity, full well, and crosstalk probability, will be presented.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donald Figer, Joong Lee, Elizabeth Corrales, Jonathan Getty, and Lynn Mears "HgCdTe detectors grown on silicon substrates for observational astronomy", Proc. SPIE 10709, High Energy, Optical, and Infrared Detectors for Astronomy VIII, 1070926 (10 July 2018);

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