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12 July 2018 The operational characteristics and potential applications of a low voltage EMCCD in a CMOS process
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Abstract
The Electron Multiplying Test Chip 1 (EMTC1) was developed with the aim of creating a device which could produce superior Electron Multiplication (EM) gain at a greatly reduced voltage. An EM gain exceeding 3% per stage has been recorded for a relatively low voltage (~13.0V) from two recently developed pixel structures. An electro-optical characterisation of the EMTC1 is presented focusing on charge transfer via experimental and simulation results aiming to provide insight into the transfer and multiplication process. The Charge Transfer Inefficiency (CTI) is analysed with the aim of providing a greater understanding of the charge transfer process. Light starved applications such as Earth observation and automated inspection are known to benefit from Time Delay Integration (TDI) and electron multiplication. Though traditionally implemented in CCDs, implementing TDI in CMOS technology can lead to an increase of functionality, higher readout speeds and reduced noise. This paper presents a discussion of the implication of these results on the potential applications of this sensor.
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A. G. Dunford, K. D. Stefanov, and A. D. Holland "The operational characteristics and potential applications of a low voltage EMCCD in a CMOS process", Proc. SPIE 10709, High Energy, Optical, and Infrared Detectors for Astronomy VIII, 1070927 (12 July 2018); https://doi.org/10.1117/12.2313473
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