Paper
23 May 1989 GHz GaAs Ccd's: Promises, Problems And Progress
R E Colbeth, D V Rossi, J I Song, E R Fossum
Author Affiliations +
Abstract
Progress in high-speed GaAs charge-coupled device (CCD) research is described. Experimental and modelling results are reported for two different structures; capacitive gate CCD's and resistive gate CCD's. A charge packet replicator/subtractor circuit is discussed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R E Colbeth, D V Rossi, J I Song, and E R Fossum "GHz GaAs Ccd's: Promises, Problems And Progress", Proc. SPIE 1071, Optical Sensors and Electronic Photography, (23 May 1989); https://doi.org/10.1117/12.952512
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Cited by 9 scholarly publications.
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KEYWORDS
Gallium arsenide

Charge-coupled devices

Field effect transistors

Doping

Clocks

Optical sensors

Photography

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