23 May 1989 GHz GaAs Ccd's: Promises, Problems And Progress
Author Affiliations +
Progress in high-speed GaAs charge-coupled device (CCD) research is described. Experimental and modelling results are reported for two different structures; capacitive gate CCD's and resistive gate CCD's. A charge packet replicator/subtractor circuit is discussed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R E Colbeth, R E Colbeth, D V Rossi, D V Rossi, J I Song, J I Song, E R Fossum, E R Fossum, } "GHz GaAs Ccd's: Promises, Problems And Progress", Proc. SPIE 1071, Optical Sensors and Electronic Photography, (23 May 1989); doi: 10.1117/12.952512; https://doi.org/10.1117/12.952512


Configurations For High Speed GaAs CCD Imagers
Proceedings of SPIE (September 25 1984)
GaAs CCD readout for engineered bandgap detectors
Proceedings of SPIE (August 31 1990)
Overlapping-Gate Ccd Imagers On Gallium Arsenide
Proceedings of SPIE (December 31 1986)
Trap Characteristics In Large Area CCD Image Sensors
Proceedings of SPIE (May 22 1989)
Charge-Coupled Device Pinning Technologies
Proceedings of SPIE (May 22 1989)

Back to Top