23 May 1989 Recent Developments In Large Area Scientific CCD Image Sensors
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Proceedings Volume 1071, Optical Sensors and Electronic Photography; (1989); doi: 10.1117/12.952513
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
The design and performance of a 1024x1024 pixel charge-coupled device (CCD) imager are described. This device is fabricated utilizing a 3-phase, three-level polysilicon gate process. The chip is thinned and is employed in the back-illumination mode. Detailed measurements including imagery, read noise, full well capacity, charge transfer efficiency, linearity, dark current, spectral response, residual image, and charge collection efficiency are reported.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Janesick, Tom Elliott, Richard Bredthauer, John Cover, Russell Schaefer, Richard Varian, "Recent Developments In Large Area Scientific CCD Image Sensors", Proc. SPIE 1071, Optical Sensors and Electronic Photography, (23 May 1989); doi: 10.1117/12.952513; https://doi.org/10.1117/12.952513

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