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5 March 2018 Low energy proton irradiation effects on InP/InGaAs DHBTs and InP-base frequency dividers
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Proceedings Volume 10710, Young Scientists Forum 2017; 107100C (2018) https://doi.org/10.1117/12.2315313
Event: Young Scientists Forum 2017, 2017, Shanghai, China
Abstract
InP/InGaAs DHBTs and frequency dividers are irradiated by low energy proton, and displacement damage effect of the devices are analyzed. InP/InGaAs DHBTs has been made DC characteristics measurements, and the function measurement for frequency dividers has been done both before and after proton irradiation. The breakdown voltage of InP DHBTs drop to 3.7V When the fluence up to 5x1013 protons/cm2. Meanwhile, the function of frequency dividers get out of order. Degradation of DC characteristics of DHBTs are due to the radiation-induced defects in the quasi neutral base and the space charge region of base-collector and base-emitter junctions. The performance deterioration of DHBTs induce the fault of frequency dividers, and prescaler may be the most sensitive circuit.
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Xingyao Zhang, Yudong Li, Qi Guo, and Jie Feng "Low energy proton irradiation effects on InP/InGaAs DHBTs and InP-base frequency dividers", Proc. SPIE 10710, Young Scientists Forum 2017, 107100C (5 March 2018); https://doi.org/10.1117/12.2315313
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