5 March 2018 Changes of photoluminescence of electron beam irradiated self-assembled InAs/GaAs quantum dots
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Proceedings Volume 10710, Young Scientists Forum 2017; 107100I (2018) https://doi.org/10.1117/12.2317612
Event: Young Scientists Forum 2017, 2017, Shanghai, China
Abstract
We investigate the effects of 1.0MeV electron beam irradiation on the photoluminescence of self-assembled InAs/GaAs quantum dots. After irradiation doses up to 1×1016e-/cm2 , photoluminescence of all samples was degraded dramatically and some additional radiation-induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low electron doses under different photo-injection condition in two samples, are also noticed. Different energy shift was observed in two samples with different Quantum Dot sizes. We attribute this remarkable phenomenon to combination of stress relaxation induced red-shift and In-Ga intermixing caused blue-shift.
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Maliya , Maliya , Abuduwayiti Aierken, Abuduwayiti Aierken, Yudong Li, Yudong Li, Dong Zhou, Dong Zhou, Xiaofan Zhao, Xiaofan Zhao, Qi Guo, Qi Guo, Chaoming Liu, Chaoming Liu, } "Changes of photoluminescence of electron beam irradiated self-assembled InAs/GaAs quantum dots", Proc. SPIE 10710, Young Scientists Forum 2017, 107100I (5 March 2018); doi: 10.1117/12.2317612; https://doi.org/10.1117/12.2317612
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