5 March 2018 Optical and mechanical properties of Al-doped GaSe crystals
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Proceedings Volume 10710, Young Scientists Forum 2017; 107100J (2018) https://doi.org/10.1117/12.2306770
Event: Young Scientists Forum 2017, 2017, Shanghai, China
Abstract
Doping Al atom was performed to improve the hardness of GaSe crystal. The Al-doped GaSe (Ga0.49Se0.50: Al 0.15 wt.% and Ga0.49Se0.50: Al 0.35 wt.%) were grown by the modified Bridgman method with crucible rotation technique. Compared with pure crystal, the hardness of Al-doped GaSe crystals is increased markedly (2.6 and 3.2 times). The GaSe: Al crystal hardness increases with Al concentration increase, but high Al concentration leads to the optical quality degradation (Ga0.49Se0.50: Al 0.35 wt.% possesses lower optical quality). Therefore, the selection of appropriate Al-doping level is important for the application of GaSe: Al crystals.
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Shijing Chen, Shijing Chen, Changbao Huang, Changbao Huang, Youbao Ni, Youbao Ni, Haixin Wu, Haixin Wu, Zhenyou Wang, Zhenyou Wang, } "Optical and mechanical properties of Al-doped GaSe crystals ", Proc. SPIE 10710, Young Scientists Forum 2017, 107100J (5 March 2018); doi: 10.1117/12.2306770; https://doi.org/10.1117/12.2306770
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