5 March 2018 Optical and mechanical properties of Al-doped GaSe crystals
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Proceedings Volume 10710, Young Scientists Forum 2017; 107100J (2018) https://doi.org/10.1117/12.2306770
Event: Young Scientists Forum 2017, 2017, Shanghai, China
Doping Al atom was performed to improve the hardness of GaSe crystal. The Al-doped GaSe (Ga0.49Se0.50: Al 0.15 wt.% and Ga0.49Se0.50: Al 0.35 wt.%) were grown by the modified Bridgman method with crucible rotation technique. Compared with pure crystal, the hardness of Al-doped GaSe crystals is increased markedly (2.6 and 3.2 times). The GaSe: Al crystal hardness increases with Al concentration increase, but high Al concentration leads to the optical quality degradation (Ga0.49Se0.50: Al 0.35 wt.% possesses lower optical quality). Therefore, the selection of appropriate Al-doping level is important for the application of GaSe: Al crystals.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shijing Chen, Shijing Chen, Changbao Huang, Changbao Huang, Youbao Ni, Youbao Ni, Haixin Wu, Haixin Wu, Zhenyou Wang, Zhenyou Wang, } "Optical and mechanical properties of Al-doped GaSe crystals ", Proc. SPIE 10710, Young Scientists Forum 2017, 107100J (5 March 2018); doi: 10.1117/12.2306770; https://doi.org/10.1117/12.2306770


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