24 April 2018 Preparation of low-toxic Zn-Ag-In-Te quantum dots with tunable near-IR emission toward optical applications
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Proceedings Volume 10712, Optical Manipulation Conference; 107121M (2018) https://doi.org/10.1117/12.2317057
Event: SPIE Structured Light, 2018, Yokohama, Japan
Abstract
Semiconductor quantum dots (QDs) composed of ZnTe-AgInTe2 solid solution ((AgIn)xZn2(1-x)Te2, ZAITe) were synthesized by a thermal reaction of corresponding metal acetates and a Te precursor in 1-dodecanethiol. TEM observations revealed that rod-shaped QDs with width of ca. 4 nm and length of ca. 16 nm were formed regardless of chemical composition of particles, x value. The absorption onset and the band-edge PL peak energy were enlarged from 1.13 to 1.53 eV and from 1.23 eV to 1.53 eV, respectively, with a decrease in x from 1.0 to 0.25. The observed optical properties of ZAITe QDs were largely tunable in the near-IR region , being suitable for optical applications.
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Tatsuya Kameyama, Kouta Sugiura, Yujiro Ishigami, Takahisa Yamamoto, Susumu Kuwabata, Tomoki Okuhata, Naoto Tamai, Tsukasa Torimoto, "Preparation of low-toxic Zn-Ag-In-Te quantum dots with tunable near-IR emission toward optical applications ", Proc. SPIE 10712, Optical Manipulation Conference, 107121M (24 April 2018); doi: 10.1117/12.2317057; https://doi.org/10.1117/12.2317057
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