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17 September 2018 Lateral heterostructures in two-dimensional transition metal dichaolcogenides for optoelectronic applications (Conference Presentation)
Hossein Taghinejad, Ali A. Eftekhar, Ali Adibi
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Proceedings Volume 10721, Active Photonic Platforms X; 107210L (2018) https://doi.org/10.1117/12.2321681
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States
Abstract
A new approach for realization of lateral heterostructures with lithography-defined junction profiles based on selective-area control of two-dimensional transition metal dichalcogenide (2D TMDC) alloys is presented. The unprecedented degree of control over the in-plane spatial profile and alloy composition of the 2D TMDC alloying process enables the precise tuning of the shape and optoelectronic properties of the resulting TMDC heterostructures and formation of quantum structures (e.g., quantum dots and quantum lines) for optoelectronic applications. The main challenges in realization of such high-quality lateral heterostructures, especially the effect of alloying-induced strain and defects on the structural and optoelectronic properties of TMDC alloys, and solutions to address these challenges will be discussed in depth. The application of these unique structures for light generation and detection will also be discussed.
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Hossein Taghinejad, Ali A. Eftekhar, and Ali Adibi "Lateral heterostructures in two-dimensional transition metal dichaolcogenides for optoelectronic applications (Conference Presentation)", Proc. SPIE 10721, Active Photonic Platforms X, 107210L (17 September 2018); https://doi.org/10.1117/12.2321681
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KEYWORDS
Heterojunctions
Optoelectronics
Transition metals
Quantum dots
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