Domain wall dynamics in GaMnAsP films with perpendicular anisotropy

Xinyu Liu; Xiang Li; Sining Dong; Margaret Dobrowolska; Jacek K. Furdyna

doi:10.1117/12.2320734

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20 September 2018 Domain wall dynamics in GaMnAsP films with perpendicular anisotropy

Xinyu Liu, Xiang Li, Sining Dong, Margaret Dobrowolska, Jacek K. Furdyna

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Proceedings Volume 10732, Spintronics XI; 107320P (2018) https://doi.org/10.1117/12.2320734
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States

Abstract

Dynamics of domain wall (DW) nucleation, relaxation and switching is studied in a series of GaMnAsP films with anisotropy perpendicular to the film plane using ac susceptibility measurements. Measurements of dc and ac magnetization along the [001] crystal axis (the easy axis of GaMnAsP film) were performed by a superconducting quantum interference device (SQUID). The ac driving field was applied at various frequencies, from 0.1 Hz to 1000 Hz at an amplitude of 3.77 Oe. Characteristic dynamic modes in the ac spectra were mapped in all GaMnAsP films near the Curie temperature T_C, where the coercive field is comparable to the ac driving field. More significantly, we were able to identify DW relaxation, sliding, and switching from Cole-Cole plots. We found that DW segmental relaxation becomes dominant in GaMnAsP films with higher P concentration, where the coercive fields are enlarged as P concentration increases.

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Xinyu Liu, Xiang Li, Sining Dong, Margaret Dobrowolska, and Jacek K. Furdyna "Domain wall dynamics in GaMnAsP films with perpendicular anisotropy", Proc. SPIE 10732, Spintronics XI, 107320P (20 September 2018); https://doi.org/10.1117/12.2320734

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