Conductive BiSb topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching

Pham Nam Hai; Huynh Duy Khang Nguyen; Kenichiro Yao; Yugo Ueda

doi:10.1117/12.2316612

20 September 2018 Conductive BiSb topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching

Pham Nam Hai, Huynh Duy Khang Nguyen, Kenichiro Yao, Yugo Ueda

Author Affiliations +

Proceedings Volume 10732, Spintronics XI; 107320U (2018) https://doi.org/10.1117/12.2316612
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States

Abstract

We report on epitaxial crystal growth and spin Hall effect in BiSb topological insulator thin films. We show that BiSb thin films with conductivity as high as σ ~ 2.5∗10⁵ Ω^-1m^-1 can be epitaxially grown on GaAs(111)A substrate. Meanwhile, evaluation of spin-orbit-torque in Bi_0.9Sb_0.1/MnGa bi-layers reveals a colossal spin Hall angle of θ_SH ~ 52 and a spin Hall conductivity σ_SH ~ 1.3∗10⁷ ℏ/2e Ω^-1m^-1 at room temperature. We demonstrate that BiSb thin films can generate a colossal spin-orbit field of 2.3 kOe/(MA/cm²) and a critical switching current density as low as 1.5 MA/cm² in Bi_0.9Sb_0.1/MnGa bi-layers. BiSb is the best candidate for the first industrial application of topological insulators.

Citation Download Citation

Pham Nam Hai, Huynh Duy Khang Nguyen, Kenichiro Yao, and Yugo Ueda "Conductive BiSb topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching", Proc. SPIE 10732, Spintronics XI, 107320U (20 September 2018); https://doi.org/10.1117/12.2316612

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