Theory of bilinear magneto-electric resistance from topological-insulator surface states

Steven S.-L. Zhang; Giovanni Vignale

doi:10.1117/12.2323126

20 September 2018 Theory of bilinear magneto-electric resistance from topological-insulator surface states

Proceedings Volume 10732, Spintronics XI; 1073215 (2018) https://doi.org/10.1117/12.2323126
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States

Abstract

We theoretically investigate a new kind of nonlinear magnetoresistance on the surface of three-dimensional topological insulators (TIs). At variance with the unidirectional magnetoresistance (UMR) effect in magnetic bilayers, this nonlinear magnetoresistance does not rely on a conducting ferromagnetic layer and scales linearly with both the applied electric and magnetic fields; for this reason, we name it bilinear magneto-electric resistance (BMER). We show that the sign and the magnitude of the BMER depends sensitively on the orientation of the current with respect to the magnetic field as well as the crystallographic axes - a property that can be utilized to map out the spin texture of the topological surface states via simple transport measurement, alternative to the angle-resolved photoemission spectroscopy (ARPES).

Conference Presentation

Citation Download Citation

Steven S.-L. Zhang and Giovanni Vignale "Theory of bilinear magneto-electric resistance from topological-insulator surface states", Proc. SPIE 10732, Spintronics XI, 1073215 (20 September 2018); https://doi.org/10.1117/12.2323126

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