Superconducting quantum dot and the sub-gap states

Rok Žitko

doi:10.1117/12.2322365

20 September 2018 Superconducting quantum dot and the sub-gap states

Rok Žitko

Proceedings Volume 10732, Spintronics XI; 107321N (2018) https://doi.org/10.1117/12.2322365
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States

Abstract

Quantum dots are nanostructures made of semiconducting materials that are engineered to hold a small amount of electric charge (a few electrons) that is controlled by external gate and may hence be considered as tunable artificial atoms. A quantum dot may be contacted by conductive leads to become the active part of a single-electron transistor, a device that is highly conductive only at very specific gate voltages. In recent years a significant attention has been given to more complex hybrid devices, in particular superconductor-semiconductor heterostructures. Here I review the theoretical and experimental studies of small quantum-dot devices contacted by one or several superconducting leads. I focus on the research on the low-lying localized electronic excitations that exist inside the superconducting gap (Yu-Shiba-Rusinov states) and determine the transport properties of these devices. The sub-gap states can be accurately simulated using the numerical renormalization group technique, often providing full quantitative understanding of the observed phenomena.

Conference Presentation

Citation Download Citation

Rok Žitko "Superconducting quantum dot and the sub-gap states", Proc. SPIE 10732, Spintronics XI, 107321N (20 September 2018); https://doi.org/10.1117/12.2322365

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