Presentation + Paper
20 September 2018 Theory of charge-spin conversion at oxide interfaces: the inverse spin-galvanic effect
Author Affiliations +
Abstract
We evaluate the non-equilibrium spin polarization induced by an applied electric field for a tight-binding model of electron states at oxides interfaces in LAO/STO heterostructures. By a combination of analytic and numerical approaches we investigate how the spin texture of the electron eigenstates due to the interplay of spin-orbit coupling and inversion asymmetry determines the sign of the induced spin polarization as a function of the chemical potential or band filling, both in the absence and presence of local disorder. With the latter, we find that the induced spin polarization evolves from a non monotonous behavior at zero temperature to a monotonous one at higher temperature. Our results may provide a sound framework for the interpretation of recent experiments.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Götz Seibold, Sergio Caprara, and Roberto Raimondi "Theory of charge-spin conversion at oxide interfaces: the inverse spin-galvanic effect", Proc. SPIE 10732, Spintronics XI, 107322P (20 September 2018); https://doi.org/10.1117/12.2319592
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Scattering

Interfaces

Spin polarization

Oxides

Matrices

Heterojunctions

Spin dynamics

Back to Top