Growth of aluminum nitride on silicon by metalorganic chemical vapor deposition (Conference Presentation)

Andrew P. Lange; S. Mahajan

doi:10.1117/12.2323754

17 September 2018 Growth of aluminum nitride on silicon by metalorganic chemical vapor deposition (Conference Presentation)

Andrew P. Lange, S. Mahajan

Author Affiliations +

Proceedings Volume 10754, Wide Bandgap Power and Energy Devices and Applications III; 1075406 (2018) https://doi.org/10.1117/12.2323754
Event: SPIE Optical Engineering + Applications, 2018, San Diego, California, United States

Abstract

The epitaxial growth of group III-nitride structures on silicon by metalorganic chemical vapor deposition requires careful management of thermal stress. Cracking due to thermal mismatch in these structures can be mitigated using aluminum nitride (AlN) buffer layers which induce compressive strain in overgrown gallium nitride. However, lattice mismatch between AlN and silicon and reactions between ammonia, aluminum, and silicon during the initial stages of growth require careful process control during film nucleation. In this paper, transmission electron microscopy studies of dislocation structures at the interface between silicon and aluminum nitride buffer layers will be presented. The atomic structure at the interface differed when either aluminum or ammonia were introduced into the chamber first. These observations are generally consistent with what others have found and raise interesting questions about the formation mechanisms of dislocations during AlN growth.

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Andrew P. Lange and S. Mahajan "Growth of aluminum nitride on silicon by metalorganic chemical vapor deposition (Conference Presentation)", Proc. SPIE 10754, Wide Bandgap Power and Energy Devices and Applications III, 1075406 (17 September 2018); https://doi.org/10.1117/12.2323754

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KEYWORDS

Aluminum nitride

Silicon

Metalorganic chemical vapor deposition

Aluminum

Interfaces

Gallium nitride

Process control

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