A study of temperature dependent current-voltage (I-V-T) characteristics in Ni/(-201) β-Ga2O3 Schottky diode (Conference Presentation)

Jianyi Gao; Zheng Xu; Siwei Li; Srabanti Chowdhury

doi:10.1117/12.2323378

17 September 2018 A study of temperature dependent current-voltage (I-V-T) characteristics in Ni/(-201) β-Ga2O3 Schottky diode (Conference Presentation)

Jianyi Gao, Zheng Xu, Siwei Li, Srabanti Chowdhury

Author Affiliations +

Proceedings Volume 10754, Wide Bandgap Power and Energy Devices and Applications III; 107540D (2018) https://doi.org/10.1117/12.2323378
Event: SPIE Optical Engineering + Applications, 2018, San Diego, California, United States

Abstract

Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor for power electronic applications. Investigation into the conduction mechanism of Ga2O3 Schottky diodes is important for improving the device performance. In this study, the forward-biased temperature dependent current-voltage (I-V-T) characteristics of Ni/(-201) β-Ga2O3 Schottky diodes have been investigated in the temperature range of 298-473 K. The apparent barrier height (ϕ_ap) increased while the ideality factor (n) decreased with the increase in temperature. Such a temperature dependent behavior of ϕ_ap and n was explained by the inhomogeneity of ϕ_ap, which obeyed Gaussian distribution with mean barrier height of 1.8 eV and standard deviation of 201 mV. Subsequently, zero-bias barrier height (¯ϕ_B0) and Richardson constant (A*) were obtained from the slope and intercept of the modified Richardson plot as 1.18 e V and 94.04 A·cm-2·K-2, respectively. The ¯ϕ_B0 obtained from the modified Richardson plot was in good agreement with the theoretical value calculated from the work function of Ni and electron affinity of β-Ga2O3. The I-V-T characteristics of Ni/-Ga2O3 Schottky diodes can be successfully explained by the thermionic emission theory with a single Gaussian distribution of the barrier height.

Conference Presentation

Citation Download Citation

Jianyi Gao, Zheng Xu, Siwei Li, and Srabanti Chowdhury "A study of temperature dependent current-voltage (I-V-T) characteristics in Ni/(-201) β-Ga2O3 Schottky diode (Conference Presentation)", Proc. SPIE 10754, Wide Bandgap Power and Energy Devices and Applications III, 107540D (17 September 2018); https://doi.org/10.1117/12.2323378

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