Design of low noise silicon reach-through avalanche photodiodes

Zhengxi Cheng; Heliang Xu; Yongping Chen

doi:10.1117/12.2320962

13 September 2018 Design of low noise silicon reach-through avalanche photodiodes

Zhengxi Cheng, Heliang Xu, Yongping Chen

Proceedings Volume 10762, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XX; 107620H (2018) https://doi.org/10.1117/12.2320962
Event: SPIE Optical Engineering + Applications, 2018, San Diego, California, United States

Abstract

Linear avalanche photodiodes are ultra high sensitive optical detectors for low luminescent applicants. Low noise silicon reach-through avalanche photodiodes are designed and implemented through 0.35 μm high voltage CMOS process. Separated absorption multiplication (SAM) structure with vertical n++/pi/p+/pi/p five layers is adopted. The remarkable low noise is archived while maintaining linear multiplication. The photo sensitive area is 200 μm in diameter. The typical reach-through voltage and the breakdown voltage is tested to be 55 V, and 176 V, respectively. The dark current at the gain M=100 is tested to be 10 - 100 pA. The responsive wavelength is 400-1000 nm. The peak responsivity is tested to be 25 A/W at 850 nm wavelength to show the successful near infrared enhanced responsivity. The excess noise factor is estimated to be 4, much lower than those in the reported high voltage CMOS avalanche photodiodes, but close to the commercial APD fabricated through special process.

Conference Presentation

Citation Download Citation

Zhengxi Cheng, Heliang Xu, and Yongping Chen "Design of low noise silicon reach-through avalanche photodiodes", Proc. SPIE 10762, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XX, 107620H (13 September 2018); https://doi.org/10.1117/12.2320962

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