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18 September 2018 MBE growth of telecommunication wavelength single photon emitters
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Abstract
Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. MBE grown single photon emitters in the telecom E-band produce indistinguishable photons in a range of configurations including photons emitted from different quantum dots that are in separate photonics structures. During growth, circular InAs quantum dots spontaneously form on InP surfaces during cooling of a planar InAs layer that is grown at an elevated temperature. Despite manipulation of the dot shape, brightness suffers at c-band wavelengths, which is evaluated using atomic resolution electron microscopy and attributed to extended defects forming in and around the larger dots.
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© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher J. K. Richardson, Richard P. Leavitt, Je-Hyung Kim, Ilke Arslan, Bruce Arey, and Edo Waks "MBE growth of telecommunication wavelength single photon emitters", Proc. SPIE 10771, Quantum Communications and Quantum Imaging XVI, 107710E (18 September 2018); https://doi.org/10.1117/12.2318885
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