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19 September 2018 Multi-trigger resist for electron beam and extreme ultraviolet lithography
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Proceedings Volume 10775, 34th European Mask and Lithography Conference; 1077502 (2018) https://doi.org/10.1117/12.2316628
Event: 34th European Mask and Lithography Conference, 2018, Grenoble, France
Abstract
The multi-trigger resist (MTR) is a new negative tone molecular resist platform for electron beam lithography, as well as extreme ultraviolet and optical lithography. The performance of xMT resist, the precursor to MTR resist, which shows a good combination of sensitivity, low line edge roughness and high-resolution patterning has previously been reported.[1] In order to overcome limitations induced by acid diffusion, a new mechanism - the multi-trigger concept - has been introduced. The results obtained so far as the behaviour of the resist is driven towards the multi-trigger regime by manipulating the resist formulation are presented. A feature size of 13 nm in semi-dense (1:1.5 line/space) patterns, and 22nm diameter pillar patterns are demonstrated in electron beam, and 16 nm half-pitch resolution patterns are demonstrated in (extreme ultraviolet) EUV. An improvement in the LER value is seen in the higher MTR formulations.
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C. Popescu, A. McClelland, D. Kazazis, G. Dawson, J. Roth, Y. Ekinci, W. Theis, and A. P. G. Robinson "Multi-trigger resist for electron beam and extreme ultraviolet lithography", Proc. SPIE 10775, 34th European Mask and Lithography Conference, 1077502 (19 September 2018); https://doi.org/10.1117/12.2316628
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