Paper
19 September 2018 Measuring inter-layer edge placement error with SEM contours
Author Affiliations +
Proceedings Volume 10775, 34th European Mask and Lithography Conference; 107750O (2018) https://doi.org/10.1117/12.2326529
Event: 34th European Mask and Lithography Conference, 2018, Grenoble, France
Abstract
For advanced technology nodes, the patterning of integrated circuits requires not only a very good control of critical dimensions but also a very accurate control of the alignment between layers. These two factors combine to define the metric of inter-layer edge placement error (EPE) that quantifies the quality of the pattern placement critical for yield. In this work, we consider the inter-layer EPE between a contact layer with respect to a poly layer measured with SEM contours. Inter-layer EPE was measured across wafer for various critical features to assess the importance of dimensional and overlay variability. Area of overlap between contact and poly as well as contact centroid distribution were considered to further characterize the interaction between poly and contact patterns.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
François Weisbuch, Jirka Schatz, and Matthias Ruhm "Measuring inter-layer edge placement error with SEM contours", Proc. SPIE 10775, 34th European Mask and Lithography Conference, 107750O (19 September 2018); https://doi.org/10.1117/12.2326529
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Scanning electron microscopy

Overlay metrology

Semiconducting wafers

Etching

Distance measurement

Error analysis

Metrology

Back to Top