19 May 1989 Million Cycle Overwritable Phase Change Optical Disk Media
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Proceedings Volume 1078, Optical Data Storage Topical Meeting; (1989) https://doi.org/10.1117/12.952739
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
GeTe-Sb2Te3-Sb pseudo ternary components alloy shows laser induced rapid crystallization and amorphous change phenomena. Films of non stoichiometric GeTe-Sb2Te3-Sb can be crystallized using laser pulses less than 100ns duration. The crystalline structure shows the cubic structure. The time it takes to laser crystallize varies Sb concentration. And increasing the Sb concentration leads to increased crystallization temperature. The crystallization temperature of 180 C and more than 1200h stable of acceleration test of 80C 80% RH environment. Thin film disk structure of 20nm active layer produce more than million cycle over-write BER(bit error rate) stability. I would like to discuss the degradation model of pinhole generation in phase change disk media.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeo Ohta, Takeo Ohta, Masami Uchida, Masami Uchida, Kazumi Yoshioka, Kazumi Yoshioka, Kazuo Inoue, Kazuo Inoue, Tetsuya Aiyama, Tetsuya Aiyama, Shigeaki Furukawa, Shigeaki Furukawa, Koichi Kotera, Koichi Kotera, Suguru Nakamura, Suguru Nakamura, } "Million Cycle Overwritable Phase Change Optical Disk Media", Proc. SPIE 1078, Optical Data Storage Topical Meeting, (19 May 1989); doi: 10.1117/12.952739; https://doi.org/10.1117/12.952739


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