Visible Semiconductor Lasers

D. P. Bour

doi:10.1117/12.952743

19 May 1989 Visible Semiconductor Lasers

D. P. Bour

Proceedings Volume 1078, Optical Data Storage Topical Meeting; (1989) https://doi.org/10.1117/12.952743
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Short-wavelength semiconductor lasers will potentially lead to major improvements in the performance of optical data storage systems. The various approaches to making visible semiconductor lasers are reviewed, including II-VI and III-V compound semiconductor lasers, and frequency-doubled infrared lasers. Although it is anticipated that diode lasers constructed from II-VI compounds will become important in the future, high-performance diode lasers of AlGaInP, a high-bandgap III-V alloy, are presently available. Lasing wavelength is 650nm<2.<680nm, and typical threshold current densities are 1-3 kλ/cm². Recent advances in the growth of quantum well device structures have resulted in significant performance improvements.

Citation Download Citation

D. P. Bour "Visible Semiconductor Lasers", Proc. SPIE 1078, Optical Data Storage Topical Meeting, (19 May 1989); https://doi.org/10.1117/12.952743

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