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4 October 2018 GaN laser diodes for quantum sensors, clocks and systems
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Abstract
Quantum technologies containing key GaN laser components will enable a new generation of precision sensors, optical atomic clocks and secure communication systems for defence applications such as next generation navigation, gravity mapping and timing since the AlGaInN material system allows for laser diodes to be fabricated over a wide range of wavelengths from the u.v. to the visible.

We report our latest results on a range of AlGaInN diode-lasers targeted to meet the linewidth, wavelength and power requirements suitable for optical clocks and cold-atom interferometry systems. This includes the [5s2S1/2-5p2P1/2] cooling transition in strontium+ ion optical clocks at 422 nm, the [5s21S0-5p1P1] cooling transition in neutral strontium clocks at 461 nm and the [5s2s1/2 – 6p2P3/2] transition in rubidium at 420 nm.

Several approaches are taken to achieve the required linewidth, wavelength and power, including an extended cavity laser diode (ECLD) system and an on-chip grating, distributed feedback (DFB) GaN laser diode.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. P. Najda, P. Perlin, T. Suski, L. Marona, S. Stanczyk, P. Wisniewski, S. Grzanka, D. Schiavon, and M. Leszczynski "GaN laser diodes for quantum sensors, clocks and systems", Proc. SPIE 10799, Emerging Imaging and Sensing Technologies for Security and Defence III; and Unmanned Sensors, Systems, and Countermeasures, 107990G (4 October 2018); https://doi.org/10.1117/12.2324325
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