Characteristics of SiNx Diode LCD

T. Harajiri; T. Yamazaki; M. Suzuki; S. Motte; M. Toyama; Y. Tsunoda

doi:10.1117/12.976412

25 July 1989 Characteristics of SiNx Diode LCD

T. Harajiri, T. Yamazaki, M. Suzuki, S. Motte, M. Toyama, Y. Tsunoda

Proceedings Volume 1080, Liquid Crystal Chemistry, Physics, and Applications; (1989) https://doi.org/10.1117/12.976412
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Characteristics of an active-matrix LCD (Liquid Crystal Display) module utilizing two-terminal nonlinear element have been analyzed. The two-terminal nonlinear element, consisting of Metal/SiNxATO (Indium Tin Oxide) shows symmetric and steep diode characteristics. This nonlinear element is applied to 640 x 400 dots LCD which realizes contrast ratio of more than 20 in a reflective mode. Since the two-terminal element, composed of three thin film layers, has a simple structure, it can be produced with only two photolithographic fabrication processes. The LCD with those elements has the advantage of a large area display device capability. In this paper, the relations between the electro-optical characteristics of the LCD panel and the I-V (current voltage) characteristics of SiNx diode are discussed. The I-V diode characteristics can be adjusted to drive the liquid crystal by controlling the Si and N atomic ratio of the SiNx layer. Several parameters of the liquid crystal cell required for the diode matrix LCD are also discussed.

Citation Download Citation

T. Harajiri, T. Yamazaki, M. Suzuki, S. Motte, M. Toyama, and Y. Tsunoda "Characteristics of SiNx Diode LCD", Proc. SPIE 1080, Liquid Crystal Chemistry, Physics, and Applications, (25 July 1989); https://doi.org/10.1117/12.976412

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